Tel.: 8615989623158
E-mail: sales@grandetop.com
Tel.: 8615989623158
E-mail: sales@grandetop.com
RBSiC and RSiC were first introduced, but represent the limits of the lowest and highest preparation temperatures for SiC articles. The former has a higher density, but higher residual silicon, resulting in poor high temperature performance. The latter has lower strength due to higher porosity, and has higher purity and no grain boundary impurity phase. Higher high-temperature strength is often used in high-temperature structural materials, followed by HPSiC, SSiC, and LSiC, which, as the research progresses, improves material properties and process performance.
Technical Parameters
| Model | Average temperature zone size(mm) | The highest temperature（℃） | Ultimate vacuum（Pa） | Temperature uniformity（℃） | Rate of pressure rise（Pa/h）≤0.4 | Loading capacity（Kg） |
| VIS225 | 200*200*500 | 2400 | 0.3 | ±10 | ≤0.67 | 80 |
| VIS337 | 300*300*700 | 2400 | 0.3 | ±10 | ≤0.6 | 120 |
| VIS449 | 400*400*900 | 2400 | 0.3 | ±10 | ≤0.5 | 200 |
| VIS6612 | 600*600*1200 | 2400 | 0.3 | ±10 | ≤0.4 | 300 |
| VIS6618 | 600*600*1800 | 2400 | 0.3 | ±10 | ≤0.4 | 600 |
| VIS6624 | 600*600*2400 | 2400 | 0.3 | ±10 | ≤0.4 | 800 |
| VIS8830 | 800*800*3000 | 2400 | 0.3 | ±10 | ≤0.4 | 1200 |
| VIS8840 | 800*800*4000 | 2400 | 0.3 | ±10 | ≤0.4 | 1500 |
(We can customize your own vacuum sintering furnace according to your special needs)
VIS SILICON CARBIDE RECRYSTALLIZATION SINTERING FURNACE
Product Features and Special Configuration
Silicon carbide recrystallization sintering furnace classification
SiC products are various in terms of preparation methods, application fields, and forms. As one of them, SiC ceramics is a high-performance material in the ceramic field, especially for high strength, high hardness and high temperature resistance. According to its sintering method, it can be divided into: reaction sintered silicon carbide (RBSiC), no pressure. Solid phase sintered silicon carbide (SSiC), liquid phase sintered silicon carbide (LSiC), hot pressed sintered carbonized silicon (HPSiC) and recrystallized silicon carbide (RSiC).
Silicon carbide recrystallization sintering furnace applicationMaterials Science and Technology (a subject), inorganic non-metallic materials (two subjects), ceramics (three subjects), advanced ceramics (four subjects)
Preparation of silicon carbide recrystallization sintering furnaceRSiC is a high-purity SiC product in which SiC powder synthesized by the Acheson method is used as a raw material, and the raw material of the SiC powder is molded at a high temperature by evaporation of SiC fine powder and agglomerated in a neck formed of coarse particles to have a certain strength. It does not shrink during the sintering process and therefore has a high porosity.
Recrystallized silicon carbide properties
Recrystallized silicon carbide is also called recrystallized silicon carbide. It uses high-purity ultra-fine silicon carbide as raw material. Under the protection of 2400 °C high temperature and a certain pressure atmosphere, silicon carbide undergoes evaporation-aggregation and recrystallization, and particle symbiosis occurs at the particle contact. A sintered body formed. It does not shrink substantially, but has a certain number of pores.
